VARIABLE RESISTIVE ELEMENT AND NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

• Main Authors: NAKANO TAKASHI, AIZAWA KAZUO, ASANO ISAMU, KAWAGOE TAKESHI, TAMAI YUKIO, HYUGANO NAOYA, AWAYA NOBUYOSHI
• Format: Patent
• Language: English
• Published: 30.09.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To realize a high integration memory with a wide operation margin.SOLUTION: A variable resistive element 1 having a variable resistor 13 with metal oxide between a first electrode 14 and a second electrode 12 comprises: a current path, in the metal oxide, having locally high current density of current delivered between both the electrodes 12 and 14. At least one of the electrodes 12 and 14 with higher resistance than the other is called a specific electrode, and when the resistance of the specific electrode is 100 μ cm or more, a dimension R in a shorter side direction or a shorter axis direction of a contact zone where the specific electrode and the variable resistor 13 contact with each other is set 1.4 times as large as a film thickness d of the specific electrode or larger. Consequently, variation of parasitic resistance is reduced at an electrode part due to processing variation of electrodes, and variation of resistance change characteristics can be suppressed in a variable resistive element due to the variation of parasitic resistance.