SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide a thin semiconductor light-emitting element and a manufacturing method of the same.SOLUTION: A semiconductor light-emitting element 10 comprises: a substrate 11 which has a Mohs hardness of 8 and over and a thickness of greater than 0 and not greater than 100 μm; a j...

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Bibliographic Details
Main Author FURUKAWA CHISATO
Format Patent
LanguageEnglish
Published 30.09.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a thin semiconductor light-emitting element and a manufacturing method of the same.SOLUTION: A semiconductor light-emitting element 10 comprises: a substrate 11 which has a Mohs hardness of 8 and over and a thickness of greater than 0 and not greater than 100 μm; a junction layer 12 provided on the substrate 11; a semiconductor laminate 13 which includes a lamination part 13c in which a first semiconductor layer 14 of a first conductivity type, a semiconductor light-emitting layer 15 and a second semiconductor layer 16 of a second conductivity type are sequentially laminated, and a first semiconductor layer part 13d, and which is provided on the junction layer 12; a first electrode 17 provided on the exposed first semiconductor layer 14; and a second electrode 18 provided on the second semiconductor layer 16.
Bibliography:Application Number: JP20120060075