SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

• Main Authors: IINO HIROMITSU, IGUCHI SUNAO
• Format: Patent
• Language: English
• Published: 19.09.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can achieve improvement in productivity.SOLUTION: A semiconductor device according to an embodiment comprises: a layered stack in which a plurality of conductive layers and a plurality of insulation layers are alternately stacked one by one; a plurality of contact electrodes which extend in a stacking direction of the layered stack and which reach the corresponding conductive layer; first insulation parts provided between the contact electrodes and the layered stack; and second insulation parts provided between the first insulation part and the layered stack. Each of the second insulation parts is formed in a cylindrical shape with a bottom, and the contact electrodes penetrate the bottoms of the second insulation parts to reach the corresponding conductive layer. A material of the second insulation parts is a material where an etching rate becomes lower than that of a material of the first insulation parts when etching the first insulation parts.