AVALANCHE PHOTODIODE AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide an avalanche photodiode which can adjust an optical axis to a center of a light-receiving part on the basis of a position where a photocurrent reaches its peak.SOLUTION: An avalanche photodiode 100 sequentially comprises an n-type AlInAs semiconductor layer 102, a p-...

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Bibliographic Details
Main Authors IHARA SUSUMU, NAKAJI MASAHARU
Format Patent
LanguageEnglish
Published 19.09.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide an avalanche photodiode which can adjust an optical axis to a center of a light-receiving part on the basis of a position where a photocurrent reaches its peak.SOLUTION: An avalanche photodiode 100 sequentially comprises an n-type AlInAs semiconductor layer 102, a p-type AlInAs multiplication layer 103, an n-type InGaAs optical absorption layer 104 and an n-type InP light transmission layer 105 on an n-type InP substrate 101. The n-type InP light transmission layer 105 includes a p-type selective diffusion region 107 where a light-receiving part 109 is formed. A thickness of the p-type selective diffusion region 107 is thickest at a center of the light-receiving part 109 when viewed from a positive Z direction, and is gradually thinner from the center toward an end of the light-receiving part 109.
Bibliography:Application Number: JP20120049558