PLASMA PROCESSING DEVICE

• Main Authors: IKEDA SATOSHI, HORI EISUKE, NAKAMURA FUMIO, TAKEI HIDEO, OTAKE FUMITO, IKEDA HITOSHI
• Format: Patent
• Language: English
• Published: 19.09.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a plasma processing device with high productivity capable of uniformly supplying ions and radical to a surface of a processing object arranged in a vacuum chamber.SOLUTION: A plasma processing device according to the present invention comprises: a microwave introduction window 13 provided on an outer wall side of a through hole 12 opened on a vacuum chamber 10; a shower plate 16 opposed to the microwave introduction window on an inner wall side of the through hole; and a waveguide 7 opposed to the microwave introduction window outside the vacuum chamber and having plural slits 71 aligned on a face opposed to the microwave introduction window. A cylindrical member 18 defining an annular space S1 between it and an inner face of the through hole is inserted in the through hole. Plural gas introduction holes 18b are formed on the cylindrical member, and a gas introduction path 19 communicated with the space S1 is opened on a vacuum chamber wall 11.