SINGLE CRYSTAL PRODUCING METHOD AND SINGLE CRYSTAL PRODUCING APPARATUS

• Main Author: RYUO TOSHIHIKO
• Format: Patent
• Language: English
• Published: 19.09.2013
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a single crystal producing method which is able to prevent a decrease in yield by decreasing the dislocation and the polycrystal and the twinning incidence, when the single crystal is developed by a vertical boat method, and a single crystal producing apparatus.SOLUTION: In a method for manufacturing a single crystal, by accommodating a raw material and a seed crystal in a vertical vessel maintained on a support table, and melting the raw material by a heater which is set up in the periphery of the vertical vessel, after contacting the lower end of the melt with the seed crystal, giving a prescribed temperature gradient to the melt in the vertical direction, and coagulating the melt from the lower end of the melt in the same orientation as the seed crystal, the melt is coagulated to grow the single crystal while a metal melting during single crystal growth is interposed between the lateral surface of the vertical vessel and the support table holding the vertical vessel.