LASER PROCESSING METHOD AND LASER PROCESSING DEVICE

PROBLEM TO BE SOLVED: To provide a laser processing method by which a damage can be formed on a surface of a silicon carbide substrate with few debris generated.SOLUTION: A pulse laser light having a wavelength 500 nm or more, pulse energy 70 μJ or less and a repetition frequency 80 kHz or more is i...

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Bibliographic Details
Main Authors FUJIMAKI WATARU, RYU KOSHUN, MARUYAMA SO
Format Patent
LanguageEnglish
Published 02.09.2013
Subjects
BASIC ELECTRIC ELEMENTS
CLADDING OR PLATING BY SOLDERING OR WELDING
CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MACHINE TOOLS
METAL-WORKING NOT OTHERWISE PROVIDED FOR
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
SOLDERING OR UNSOLDERING
TRANSPORTING
WELDING
WORKING BY LASER BEAM
WORKING CEMENT, CLAY, OR STONE
WORKING STONE OR STONE-LIKE MATERIALS
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Summary:PROBLEM TO BE SOLVED: To provide a laser processing method by which a damage can be formed on a surface of a silicon carbide substrate with few debris generated.SOLUTION: A pulse laser light having a wavelength 500 nm or more, pulse energy 70 μJ or less and a repetition frequency 80 kHz or more is irradiated so that a distance between centers of irradiation spots becomes less than 1.7 μm to form a damage on a surface of a silicon carbide substrate. A pulse width of the pulse laser light is preferably 100 nano seconds or more. A position of a focal point of the pulse laser light is adjusted so as to be within a range between 100 μm above the surface of the silicon carbide substrate and 100 μm inside from the surface.
Bibliography:Application Number: JP20120033831