SURFACE EMITTING SEMICONDUCTOR LASER, SURFACE EMITTING SEMICONDUCTOR LASER DEVICE, OPTICAL TRANSMISSION DEVICE AND INFORMATION PROCESSING UNIT

PROBLEM TO BE SOLVED: To provide a highly reliable surface emitting semiconductor laser of a long resonator.SOLUTION: A surface emitting semiconductor laser 10 of a long resonator comprises: an n-type GaAs substrate 100; a lower DBR 102 composed of n-type AlGaAs; a resonator extension region 10d com...

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Bibliographic Details
Main Authors NAKAYAMA HIDEO, TAKEDA KAZUTAKA, KONDO TAKASHI
Format Patent
LanguageEnglish
Published 29.08.2013
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:PROBLEM TO BE SOLVED: To provide a highly reliable surface emitting semiconductor laser of a long resonator.SOLUTION: A surface emitting semiconductor laser 10 of a long resonator comprises: an n-type GaAs substrate 100; a lower DBR 102 composed of n-type AlGaAs; a resonator extension region 10d composed of n-type AlGaAs; an active region 106; a current constriction layer 110 composed of p-type AlAs; an upper DBR 108 composed of p-type AlGaAs; a p-side electrode 112; and an n-side electrode 114. As an impurity dopant of the resonator extension region 105, a group VI material or Sn is used.
Bibliography:Application Number: JP20130005052