SILICON SINGLE CRYSTAL WAFER MANUFACTURING METHOD AND ELECTRONIC DEVICE

• Main Authors: EBARA KOJI, OKA TETSUYA
• Format: Patent
• Language: English
• Published: 22.07.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a method capable of manufacturing a silicon single crystal wafer in which a favorable gettering layer adjacent to a device formation region is formed.SOLUTION: A silicon single crystal wafer manufacturing method comprises: performing a first heat treatment of maintaining a silicon single crystal wafer at a first heat treatment temperature under an oxygen-containing atmosphere for 1-60 seconds by using a rapid-heating/rapid-quenching device, and subsequently, cooling the silicon single crystal wafer to 800°C and under at a temperature reduction speed of 1-100°C/sec thereby to cause internal diffusion of oxygen and form an oxygen concentration peak region near a surface of the silicon single crystal wafer; and performing a second heat treatment thereby to cause clumping of oxygen in the silicon single crystal wafer in the oxygen concentration peak region.