PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD

• Main Authors: MIDORIKAWA RYOTARO, NISHINO MASA, NIYA TETSUYA, HANDA TATSUYA, NAGAYAMA MASAYUKI, MAKABE MASATSUGU, KOBAYASHI KEIGO
• Format: Patent
• Language: English
• Published: 18.07.2013
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To suppress microparticle occurrence in a plasma process which introduces a gas including a halogen-containing gas and an oxygen gas.SOLUTION: There is provided a plasma processing device 10 comprising: a processing container 12 which can be decompressed; a lower electrode provided in the processing container and functioning as a mounting table 20 on which a wafer W is mounted; an upper electrode or an antenna electrode arranged so as to face the lower electrode; a gas supply source 32 which introduces a gas including a halogen-containing gas and an oxygen gas into the processing container; a high-frequency power source 18 which applies high-frequency power for plasma generation to any of the upper electrode, antenna electrode, and lower electrode; and means for turning the gas into plasma by the high-frequency power for plasma generation and plasma-treating the wafer on the mounting table by the action of plasma. In this plasma processing device, out of surfaces exposed to plasma in the processing container, a part or the whole of a surface which is of equal height of at least the upper electrode side, antenna electrode side, or lower electrode side from the wafer mounting position is covered by a fluoride compound.