FORMATION METHOD OF SILICON OXIDE NITROCARBIDE LAYER

• Main Authors: KADONAGA KENTARO, LEE BYOUNG HOON, SON SUNG DUK, LEE EUN JO, CHO SAIKAKU, PARK DU HYON, SUZUKI KEISUKE
• Format: Patent
• Language: English
• Published: 08.07.2013
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a formation method of a silicon oxide nitrocarbide layer, excellent in processability and enabling also controls of dry etching resistance and wet etching resistance.SOLUTION: The formation method of a silicon oxide nitrocarbide layer for forming the silicon oxide nitrocarbide layer on a substrate comprises a process of forming the silicon oxide nitrocarbide layer by laminating a silicon nitrocarbide layer and the silicon oxide nitride layer on the substrate.