METHOD FOR FORMING RESIST PATTERN

• Main Author: TAKESHITA MASARU
• Format: Patent
• Language: English
• Published: 04.07.2013
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a new method for forming a resist pattern, in which a negative resist pattern is formed in a first patterning step by alkali development and then a second patterning step is carried out by a positive development process.SOLUTION: The method for forming a resist pattern comprises: applying a first resist composition, which contains a first base component showing increase in solubility with an alkali developing solution by an action of an acid and a photo-base generator component that generates a base by exposure, on a support body to form a first resist film; exposing, baking and developing the resist film with an alkali to form a negative resist pattern; then applying a second resist composition, which is prepared by dissolving a second base component and an acid generator component that generates an acid by exposure in an organic solvent that does not dissolve the above negative resist pattern, on the support body where the negative resist pattern is formed, so as to form a second resist film; and exposing and developing the resist film with an alkali to form a resist pattern.