RESIST COMPOSITION AND RESIST PATTERN FORMATION METHOD

• Main Authors: HIRAYAMA FUMITAKE, YAMASHITA NAOKI, KUMADA SHINJI, TAKAYAMA JUICHI
• Format: Patent
• Language: English
• Published: 24.06.2013
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CINEMATOGRAPHY; COMPOSITIONS BASED THEREON; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS; MATERIALS THEREFOR; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES; THEIR PREPARATION OR CHEMICAL WORKING-UP

PROBLEM TO BE SOLVED: To provide a resist composition that is excellent in lithography characteristics and adhesion and has reduced scum, and a resist pattern formation method.SOLUTION: There is provided a resist composition containing: a base component (A) having solubility characteristics to a developing solution that is changed by the action of an acid; an acid generator composition (B) that generates an acid by being exposed to light; a polyacrylic ester high-molecular compound (C) having an organic group containing at least one primary or secondary alcoholic hydroxyl group or at least one chain tertiary alcoholic hydroxyl group; and a photoreactive quencher (D) containing at least one of the compounds expressed by the chemical formulae (d1) to (d3).