SEMICONDUCTOR DEVICE

• Main Authors: OTAKE HITOSHI, OGASAWARA IKUKO
• Format: Patent
• Language: English
• Published: 13.06.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device of high reliability of which variation in reverse breakdown voltage is small when compared with a conventional semiconductor device.SOLUTION: The semiconductor device 100 includes an ntype semiconductor layer (first semiconductor layer) 114 and a ptype semiconductor layer (second semiconductor layer) 120 which is in a region surrounded by a plurality of straight parts 122 and a plurality of corner parts 124, on a surface of the ntype semiconductor layer 114, and pn junction is formed between the ntype semiconductor layer 114 and the ptype semiconductor layer 120. Here, a portion of the pn junction which is exposed from the surface of the ntype semiconductor layer 114 is assumed to be a pn junction exposure part. In the semiconductor device, a groove 130 is formed which has a structure lacking "a predetermined portion containing the pn junction exposure part and having a depth exceeding the depth of a bottom surface 126 of the ptype semiconductor layer 120" at all corner parts of a plurality of corner parts 124.