GAAS SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREFOR

• Main Authors: NISHIURA TAKAYUKI, HORIE YUSUKE, HIGUCHI YASUAKI, MESAKI YOSHIO
• Format: Patent
• Language: English
• Published: 16.05.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a GaAs semiconductor substrate having a surface clean enough to remove impurities and oxides on the surface by at least thermal cleaning of a substrate.SOLUTION: In a GaAs semiconductor substrate 10, the constituent atom ratio Ga/As of all Ga atoms to all As atoms in the surface layer 10a of a GaAs semiconductor substrate 10, calculated by X-ray photoelectron spectroscopy by using the 3d electron spectrum of a Ga atom and an As atom measured under conditions that the photoelectron extraction angle is 10°, is 0.5-0.9, the ratio of As atoms bonded to O atoms to all Ga atoms and all As atoms (As-O)/{(Ga)+(As)} in the surface layer 10a is 0.15-0.35, and the ratio of Ga atoms bonded to O atoms to all Ga atoms and all As atoms (Ga-O)/{(Ga)+(As)} in the surface layer 10a is 0.15-0.35.