METHOD FOR PRODUCING NITRIDE CRYSTAL

• Main Authors: KAMATA KAZUNORI, MIKAWA YUTAKA, FUJISAWA HIDEO
• Format: Patent
• Language: English
• Published: 16.05.2013
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To suppress the deposition of a low-grade crystal on the surface of a seed crystal or inner wall of a reaction vessel in a temperature increasing stage in the case of producing a nitride single crystal by the ammonothermal process and grow a high-quality nitride single crystal in high raw material use efficiency in the following growth stage.SOLUTION: Melt-back treatment to melt the seed crystal to a thickness of ≥1 μm from the surface is carried out in the temperature increasing stage of the ammonothermal process.