CRYSTALLINE SILICON INGOT AND METHOD OF PRODUCING THE SAME

• Main Authors: LAN CHUNG-WEN, LAN WENIEH, LIU YONGNG, HSU WENING, YU WEN-HUAI, HSU SUNG-LIN
• Format: Patent
• Language: English
• Published: 13.05.2013
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a crystalline silicon ingot and a method of producing the same.SOLUTION: By using a crystalline silicon seed layer, the crystalline silicon ingot is formed by a directional solidification process. The crystalline silicon seed layer is formed of a plurality of first monocrystalline silicon seeds and a plurality of second monocrystalline silicon seeds. Each of the first monocrystalline silicon seeds possesses a first crystal orientation different from (100). Each of the second monocrystalline silicon seeds possesses a second crystal orientation different from the first crystal orientation. Each of the first monocrystalline silicon seeds is adjacent to one or more of the second monocrystalline silicon seeds, and is separate from the other first monocrystalline silicon seeds.