SILICON CARBIDE SUBSTRATE, SILICON CARBIDE INGOT AND METHOD FOR PRODUCING THOSE

• Main Authors: NISHIGUCHI TARO, SASAKI MAKOTO
• Format: Patent
• Language: English
• Published: 13.05.2013
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a silicon carbide substrate excellent in uniformity of characteristics, a silicon carbide ingot and a method for producing those.SOLUTION: The method for producing the silicon carbide ingot comprises a step of preparing a base substrate 1 having ≤10° off angle to the (0001) plane and comprising single crystal silicon carbide, and a step of growing a silicon carbide layer on the surface of the base substrate 1. In the step for growing the silicon carbide layer, the temperature gradient is brought to be ≥20°C/cm in the width direction viewed from the side of the growth direction of the silicon carbide layer. By doing so, in the obtained silicon carbide ingot, almost the whole surface including the central part of the growing outermost surface 9 has become a facet plane 5; therefore, the silicon carbide ingot whose whole surface is brought to be the facet plane 5 can be obtained by solely grinding outer peripheral end portions.