THREE-DIMENSIONAL INTEGRATED ELECTRONIC DEVICE STRUCTURE INCLUDING INCREASED THERMAL DISSIPATION CAPABILITIES

PROBLEM TO BE SOLVED: To provide a microelectronic device structure including increased thermal dissipation capabilities.SOLUTION: The structure includes a three-dimensional (3D) integrated chip assembly 105 that is flip chip bonded to a substrate 110. The chip assembly includes a device substrate 1...

Full description

Saved in:
Bibliographic Details
Main Authors KEIMEL CHRISTOPHER FRED, KAUSTUBH RAVINDRA NAGARKAR
Format Patent
LanguageEnglish
Published 02.05.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES
MICROSTRUCTURAL TECHNOLOGY
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
TRANSPORTING
Online AccessGet full text

Cover

More Information
Summary:PROBLEM TO BE SOLVED: To provide a microelectronic device structure including increased thermal dissipation capabilities.SOLUTION: The structure includes a three-dimensional (3D) integrated chip assembly 105 that is flip chip bonded to a substrate 110. The chip assembly includes a device substrate 132 including an active device 144 disposed thereon. A cap layer 114 is physically bonded to the device substrate 132 to at least partially define a hermetic seal 148 about the active device 144. The microelectronic device structure provides a plurality of heat dissipation paths therethrough to dissipate heat generated therein.
Bibliography:Application Number: JP20120210260