METHOD OF FABRICATING METAL CONTACT STRUCTURE OF SEMICONDUCTOR LASER BY USING BACKSIDE UV RADIATION

• Main Authors: XI JINGQUN, ZAU CHUNG-AN
• Format: Patent
• Language: English
• Published: 25.04.2013
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

PROBLEM TO BE SOLVED: To remove alignment errors in a metal contact structure of a semiconductor laser.SOLUTION: Provided is a method of fabricating a metal contact structure of a semiconductor laser. The method includes: a step of providing a UV-transmissible semiconductor substrate, a UV-transmissible semiconductor epitaxial layer demarcating a ridge arranged between epitaxial layer edges formed by etching and being arranged so as to cover the UV-transmissible semiconductor substrate, and a UV-untransmissible metal layer arranged so as to cover the epitaxial layer ridge; a step of applying at least one photoresist layer (a positive type photoresist, an image inverted photoresist, or a negative type photoresist) so as to cover the untransmissible metal layer and the epitaxial layer edges; and a step of selectively developing a region of the photoresist layer by backside radiation with UV light together with the untransmissible metal layer used as a photolithography mask.