SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

• Main Author: MINE TERUYUKI
• Format: Patent
• Language: English
• Published: 22.04.2013
• Subjects: ELECTRICITY

PROBLEM TO BE SOLVED: To provide a semiconductor device excellent in fast operation which can improve current-voltage characteristics and increase an ON-state current, and provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device comprises: a plurality of active regions formed on a principal surface of a semiconductor substrate 12 and extending in a first direction; element isolation regions partitioning the active regions; a plurality of gate grooves formed on the principal surface of the semiconductor substrate 12 and extending in a direction crossing the plurality of active regions when viewed from above; and a plurality of gate electrodes 22 respectively buried in the gate grooves. On a bottom face of each gate groove, a pair of projections 71 is formed to extend in the first direction and top faces 71a are arranged at positions lower than the principal surface of the semiconductor substrate 12. The gate electrode 22 covers the top face 71a, an inner side face 71b and an outer side face 71c of the projection 71 with a gate insulation film 21 interposed therebetween.