SEMICONDUCTOR DEVICE MANUFACTURING METHOD

• Main Authors: MIYANO KIYOTAKA, MIYATA TOSHINORI
• Format: Patent
• Language: English
• Published: 18.04.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a method for simply manufacturing a semiconductor device which can inhibit an off-leak current while achieving a high on-state current.SOLUTION: A semiconductor device manufacturing method comprises: forming a gate insulation film on a semiconductor substrate; forming a gate electrode on the gate insulation film; introducing a first conductivity type impurity to a drain layer formation region; subsequently, performing a heat treatment to activate the first conductivity type impurity in the drain layer formation region; subsequently, introducing an inactive impurity to a source layer formation region to make single crystals of the semiconductor substrate in the source layer formation region be amorphous; subsequently, introducing a second conductivity type impurity to the source layer formation region; and subsequently, irradiating microwave on the semiconductor substrate to mono-crystallize an amorphous semiconductor at least in the source layer formation region and to activate the second conductivity type impurity in the source layer formation region. A depth of the second conductivity type impurity in the source layer formation region is shallower than a depth of the first conductivity type impurity in the drain layer formation region.