RESISTANCE CHANGE ELEMENT

PROBLEM TO BE SOLVED: To provide a resistance change element capable of achieving excellent yield in electrical characteristics and high integration by controlling a position where a low resistance path is formed by increasing a breakdown strength of an outer peripheral part of the resistance change...

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Bibliographic Details
Main Authors SAKOTSUBO IKUHIRO, SAITO YUKISHIGE, TERAI MASAYUKI
Format Patent
LanguageEnglish
Published 11.04.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a resistance change element capable of achieving excellent yield in electrical characteristics and high integration by controlling a position where a low resistance path is formed by increasing a breakdown strength of an outer peripheral part of the resistance change element having a mesa-shaped structure.SOLUTION: A resistance change element at least includes: a first electrode; a resistance change layer formed on the first electrode; and a second electrode formed on the resistance change layer. The resistance change layer at least contains a transition metal oxide, and an oxygen concentration in an outer peripheral part of the resistance change layer is higher than that in an inner part.
Bibliography:Application Number: JP20110204573