SEMICONDUCTOR DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can inhibit variation in an ion implantation amount and in an ion implantation depth to a surface of a groove formed on a principal surface of a semiconductor substrate, and activate a dopant region to which ion is im...

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Bibliographic Details
Main Author TERANISHI HIDEAKI
Format Patent
LanguageEnglish
Published 11.04.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can inhibit variation in an ion implantation amount and in an ion implantation depth to a surface of a groove formed on a principal surface of a semiconductor substrate, and activate a dopant region to which ion is implanted to form a dopant layer having approximately uniform thickness, ion dope amount and activation state.SOLUTION: A semiconductor device manufacturing method comprises the steps of: forming a groove on a principal surface of a semiconductor substrate; performing ion implantation on the principal surface side of the semiconductor substrate on which the groove is formed; and subsequently, irradiating a dopant region to which the ion is implanted with laser beams to perform an annealing treatment. The semiconductor device manufacturing method further comprises the steps of: irradiating, before performing the ion implantation on the dopant region, lateral faces of the groove with laser beams to smooth surface unevenness of the lateral faces of the groove.
Bibliography:Application Number: JP20110201768