SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

• Main Author: KANO TAIKAN
• Format: Patent
• Language: English
• Published: 14.02.2013
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide technology which manufactures a semiconductor device having a large area with high overlay accuracy and a small number of steps.SOLUTION: A manufacturing method comprises: a first lithography step which, through a step in which the whole of a device region is collectively exposed using a first mask having a first pattern and a plurality of marks, forms a first device pattern and a plurality of alignment marks in the device region; and a second lithography step which, through a step in which divided regions constituting the device region are individually exposed using a second mask including a second pattern after the first lithography step, forms a second device pattern in each of the divided regions. The plurality of marks are arranged in the first mask so that at least one alignment mark will be formed in each of the divided regions. In the second lithography step, one of the plurality of alignment marks, which is formed in at least a divided region to be exposed immediately later, is used to align the divided region and the second mask.