SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

• Main Author: MURATA TATSUKI
• Format: Patent
• Language: English
• Published: 14.02.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To increase performance of a semiconductor device.SOLUTION: A semiconductor device manufacturing method comprises: forming an n-channel MISFET An in an nMIS formation region 1A of a semiconductor substrate 1; forming a p-channel MISFET Qp in a pMIS formation region 1B of the semiconductor substrate 1; forming a silicon nitride film 5 having a tensile stress so as to cover the n-channel MISFET Qn and the p-channel MISFET Qp; performing an ultraviolet exposure treatment on the silicon nitride film 5 on the nMIS formation region 1A and the pMIS formation region 1B; subsequently, forming a mask layer 6a covering the silicon nitride film 5 in the nMIS formation region 1A and exposing the silicon nitride film 5 in the pMIS formation region 1B; and easing the tensile stress of the silicon nitride film 5 in the pMIS formation region 1B by performing a plasma treatment on the silicon nitride film 5 in the pMIS formation region 1B.