CIRCUIT CONNECTION MATERIAL, AND CIRCUIT CONNECTION STRUCTURE USING THE SAME

PROBLEM TO BE SOLVED: To provide a circuit connection material exhibiting high adhesive strength, and capable of sufficiently suppressing the generation of peeling bubbles at an interface between a circuit member and the circuit connection material in the case of a connected body is left in a high-t...

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Main Authors KUDO SUNAO, IZAWA HIROYUKI, KOBAYASHI KOJI, YOKOTA KOICHI, FUJITA SACHIKO, KATOGI SHIGEKI, NAMATAME YUTAKA, SHIBATA O
Format Patent
LanguageEnglish
Published 07.02.2013
Subjects
ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOSITIONS BASED THEREON
CURRENT COLLECTORS
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
LINE CONNECTORS
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS
MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL
ORGANIC MACROMOLECULAR COMPOUNDS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
THEIR PREPARATION OR CHEMICAL WORKING-UP
USE OF MATERIALS AS ADHESIVES
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Summary:PROBLEM TO BE SOLVED: To provide a circuit connection material exhibiting high adhesive strength, and capable of sufficiently suppressing the generation of peeling bubbles at an interface between a circuit member and the circuit connection material in the case of a connected body is left in a high-temperature high humidity environment.SOLUTION: The circuit connection material contains (a) a thermoplastic resin, (b) a radical polymerizable compound, and (c) a radical polymerization initiator, wherein (b) the radical polymerizable compound is represented by formula (1), and satisfies the condition of the following expression (I): 10≤S2/S1≤14, wherein S1 is an integral value of a spectrum measured in the chemical shift value of 2.75 to 3.10 ppm inHNMR with tetramethylsilane as an internal standard; and S2 is an integral value thereof in 3.90 to 4.25 ppm. In the formula (1), Ris a hydrogen atom or a methyl group; j is an integer of 1 to 3; k is an integer of 2 to 7; m is an integer of 4 to 8; and n is an integer of 5 to 7.
Bibliography:Application Number: JP20110164389