PROTECTIVE DIODE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME

PROBLEM TO BE SOLVED: To provide a protective diode having a small PN-junction capacitance and to provide a semiconductor device including the same.SOLUTION: A protective diode includes: a semiconductor substrate having a first region, a second region surrounding the first region, and a third region...

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Bibliographic Details
Main Authors HIRAMA ATSUSHI, AZUMA MASAHIKO
Format Patent
LanguageEnglish
Published 04.02.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a protective diode having a small PN-junction capacitance and to provide a semiconductor device including the same.SOLUTION: A protective diode includes: a semiconductor substrate having a first region, a second region surrounding the first region, and a third region surrounding the second region; a first insulating layer provided between the second region and the third region; a first-conductivity-type semiconductor provided in the third region; a second-conductivity-type semiconductor provided in the second region; and a capacitance relaxation layer provided in the first region. A semiconductor device includes: the protective diode; a first pad connected to the protective diode; a protective diode having a structure that does not have the capacitance relaxation layer; and the second pad connected to the protective diode having a structure that does not have the capacitance relaxation layer.
Bibliography:Application Number: JP20110158929