SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To prevent the occurrence of dendrite between electrode pads.SOLUTION: A semiconductor device has a first electrode pad 1a, a second electrode pad 1b, and a metal-film pattern 3 disposed between the first electrode pad 1a and the second electrode pad 1b. (1) The metal-film patt...
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Main Author | |
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Format | Patent |
Language | English |
Published |
04.02.2013
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Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To prevent the occurrence of dendrite between electrode pads.SOLUTION: A semiconductor device has a first electrode pad 1a, a second electrode pad 1b, and a metal-film pattern 3 disposed between the first electrode pad 1a and the second electrode pad 1b. (1) The metal-film pattern 3 is electrically connected to the first electrode pad 1a or the same potential as the first electrode pad 1a is applied to the metal-film pattern 3, and (2) the metal-film pattern 3 is covered with an insulating film (a protective insulating film 2). |
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Bibliography: | Application Number: JP20110156236 |