METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT

• Main Authors: USHIDA YASUHISA, BOYAMA SHINYA
• Format: Patent
• Language: English
• Published: 31.01.2013
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To transform a p-contact layer to p-type, and reduce a contact resistance between it and an electrode.SOLUTION: A first p-contact layer 151 being GaN doped with Mg, is formed on a p-clad layer 14 by the MOCVD method (Fig. 2(b)). After decreasing the temperature down to 700°C of the growth temperature for a second p-contact layer 152 being formed in a next step, the supply of ammonia is stopped to switch a carrier gas from hydrogen to nitrogen. Thereby Mg in the first p-contact layer 151 is activated, and the first p-contact layer 151 is transformed to p-type. Then, the temperature for a previous process of 700°C is maintained, a second p-contact layer 152 being InGaN doped with Mg, is formed on the first p-contact layer 151 by the MOCVD method with nitrogen as the carrier gas (Fig. 2(c)).