GRAIN SIZE INSPECTION METHOD

PROBLEM TO BE SOLVED: To provide a method for inspecting a grain size of polycrystalline Si obtained by laser-annealing amorphous Si.SOLUTION: A grain size inspection method comprises the steps of: preparing a calibration map indicating a relationship between laser density and average luminance of p...

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Bibliographic Details
Main Authors UDA MITSURU, KOHAYASE ATSUSHI
Format Patent
LanguageEnglish
Published 31.01.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a method for inspecting a grain size of polycrystalline Si obtained by laser-annealing amorphous Si.SOLUTION: A grain size inspection method comprises the steps of: preparing a calibration map indicating a relationship between laser density and average luminance of polycrystalline Si after laser annealing, for each predetermined film thickness of amorphous Si provided on a substrate (S11); measuring average luminance for each predetermined region of a polycrystalline Si layer obtained by the laser annealing (S12); obtaining film thickness data for each predetermined region of the polycrystalline Si layer (S13); comparing the average luminance and the film thickness data for each predetermined region with the calibration map of the predetermined thickness corresponding to the film thickness data, to calibrate the average luminance for each region (S14); obtaining the average luminance after the calibration for each predetermined region over an entire region to be inspected to create a luminance map (S15); and determining whether or not the average luminance after the calibration for each region is included in a predetermined range in the luminance map, to determine an optimal grain size range (S16).
Bibliography:Application Number: JP20110152393