INTERPOSER, METHOD FOR MANUFACTURING THE SAME, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide an interposer of which the warpage caused by internal stress of an organic insulating film on a silicon substrate can be mitigated.SOLUTION: The interposer includes: a silicon substrate 1 having a plurality of through electrodes 10; an organic insulating film 220 for...

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Bibliographic Details
Main Author OTA YUKITOSHI
Format Patent
LanguageEnglish
Published 31.01.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide an interposer of which the warpage caused by internal stress of an organic insulating film on a silicon substrate can be mitigated.SOLUTION: The interposer includes: a silicon substrate 1 having a plurality of through electrodes 10; an organic insulating film 220 formed on one surface of the silicon substrate 1; and external connection terminals (electrode pads 3 or solder bumps 14) formed on the other surface of the silicon substrate 1 and electrically connected to the through electrodes 10. Notches 30 are formed at those portions of the organic insulating film 220 which are positioned between the through electrodes 10.
Bibliography:Application Number: JP20110152351