METHOD FOR MANUFACTURING SILICON SUBSTRATE, AND SILICON SUBSTRATE

• Main Authors: NAKAI KATSUHIKO, SAKAMOTO HIKARI, TAKAYAMA SEIJI, DEAI HIROYUKI
• Format: Patent
• Language: English
• Published: 17.01.2013
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon substrate capable of manufacturing a silicon substrate with a reduced oxygen concentration.SOLUTION: A device formation intended region part of a silicon substrate which is cut out from a silicon single crystal body produced by the Czochralski method is processed so as to have a thickness of 50-200 μm. Then, when expressing the temperature as T (°C), the time as t (seconds), and the initial oxygen concentration Oi (the number of atoms/cm), annealing is performed at the temperature T (°C) or higher and for the time t (seconds) or longer, which are given by formula: t=f(Oi)(Tsi/200)/{0.52exp[-2.94×10/(273+T)]} (in the formula, f(Oi)=1.43×10Oi-3.35×10Oi+2.51×10Oi-3.99×10Oi-83.43).