LAYOUT METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To suppress variation in characteristics of a transistor which is caused by double patterning.SOLUTION: A plurality of gate electrode patterns 10-15 arranged in parallel to each other are set to be a first pattern which is formed in a first exposure step of a double patterning...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
10.01.2013
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Subjects | |
Online Access | Get full text |
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