HIGH EFFICIENCY GROUP III NITRIDE LED WITH LENTICULAR SURFACE

PROBLEM TO BE SOLVED: To provide a high efficiency Group III nitride light emitting diode.SOLUTION: The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and a lenticula...

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Bibliographic Details
Main Authors DAVID BEARDSLEY SLATER JR, BARASAN JHEISCH, D'ONOFURIO MATTHEW, JOHN ADAM EDMOND
Format Patent
LanguageEnglish
Published 13.12.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a high efficiency Group III nitride light emitting diode.SOLUTION: The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and a lenticular surface containing silicon carbide on or above the light emitting region.
Bibliography:Application Number: JP20120194695