EVALUATION METHOD AND MANUFACTURING METHOD OF SILICON WAFER

• Main Authors: ONO TAKASHI, UCHINO MAKOTO, KOIKE YASUO, HORAI MASATAKA
• Format: Patent
• Language: English
• Published: 10.12.2012
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MEASURING; PHYSICS; SEMICONDUCTOR DEVICES; TESTING

PROBLEM TO BE SOLVED: To provide means for accurately evaluating presence/absence and in-plane distribution of oxygen precipitates in a silicon wafer irrespective of substrate resistance.SOLUTION: An evaluation method of a silicon wafer includes: acquiring first in-plane distribution information indicating an in-plane distribution of photoluminescence intensity on a silicon wafer surface for an evaluation object silicon wafer; acquiring second in-plane distribution information indicating an in-plane distribution of the photoluminescence intensity on the silicon wafer surface after treating thermal oxidation processing to the evaluation object silicon wafer from which the first in-plane distribution information is acquired; obtaining difference information between the first in-plane distribution information and third in-plane distribution information obtained by correcting the second in-plane distribution information using a correction coefficient smaller than 1; and evaluating an evaluation item selected from a group including the presence/absence of oxygen precipitates and the in-plane distribution of the oxygen precipitates in the evaluation object silicon wafer on the basis of the obtained difference information.