SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF THE SAME AND STACKED SEMICONDUCTOR DEVICE

• Main Authors: NISHIO TAICHI, NAKABAYASHI TAKASHI
• Format: Patent
• Language: English
• Published: 10.12.2012
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To improve reliability of a wiring directly connected with a through electrode.SOLUTION: A semiconductor device 100 comprises: a semiconductor substrate 1 having a through hole 1A; a second interlayer insulation film 7b formed on the semiconductor substrate 1; a first external connection wiring 8aformed on the second interlayer insulation film 7b in such a manner as to cover the through hole 1A; a third interlayer insulation film 7c formed on the second interlayer insulation film 7b in such a manner as to cover the first external connection wiring 8a; a second external connection wiring 8bformed in the third interlayer insulation film 7c on an upper side portion of the first external connection wiring 8a; and a through electrode 15A formed at least on an internal surface of the through hole 1A and electrically connected to each of the external connection wirings 8a, 8b. The first external connection wiring 8aincludes a plurality of pores 19a. The second external connection wiring 8bis formed in such a manner as to cover the pores 19a of the first external connection wiring 8a.