APPARATUS FOR PRODUCING SINGLE CRYSTAL INGOT AND METHOD FOR MEASURING POSITION OF LIQUID SURFACE

• Main Authors: OTSUKA HIROAKI, SANADA HIROSHI
• Format: Patent
• Language: English
• Published: 10.12.2012
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide an apparatus for producing a single crystal ingot, capable of highly precisely measuring the position of a liquid surface of a melt pooled inside a crucible and stably pulling up the single crystal ingot.SOLUTION: The apparatus 10 for producing a single crystal ingot is equipped with: an airtight chamber 11; the crucible 20 housing a dissolved raw material; a heating means 40 that heats the crucible 20, thereby melting the dissolved raw material housed inside the crucible 20 to produce the melt; and a pulling means for pulling a seed crystal upward. The apparatus is equipped with: an indicator member 60 that is fixed at a position in the upper part of the crucible 20 and away from the single crystal ingot that is pulled up; an imaging means 61 that takes pictures of the quartz crucible 20 and the indicator member 60; and a calculating means 62 that, based on the pictures taken by the imaging means 61, determines the position of a reflected image 60A of the indicator member 60 reflected on the liquid surface inside the quartz crucible 20, thereby calculating the height of the liquid surface.