CRUCIBLE FOR GROWING CRYSTAL, AND METHOD FOR GROWING CRYSTAL

• Main Authors: MIYAGAWA CHIHIRO, HOSHIKAWA KEIGO, OBA ETSUKO
• Format: Patent
• Language: English
• Published: 06.12.2012
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To grow a crystal having the same crystal orientation as a seed crystal in a high yield, and efficiently grow a large-sized crystal.SOLUTION: A single crystal is grown from the seed crystal 20 by using the seed crystal 20 which has a contact surface formed into a taper surface, which contacts a taper surface of a taper housing part 11b of a crucible 10, having the same inclination angle as the taper surface of the taper housing part 11b, and disposing the seed crystal 20 in the crucible 10 such that the taper surface of the taper housing part 11b is made to contact the contact surface of the seed crystal 20 so that when a crystal raw material is melted, the melt is inhibited from flowing in the interface between the taper housing part 11b and the seed crystal 20.