SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To miniaturize a semiconductor device by reducing the area of a well feeding region, to suppress variation in a well potential between element formation regions, and to thin the width of an isolation portion.SOLUTION: A semiconductor device is formed on a surface of a semicondu...

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Bibliographic Details
Main Author OYU KIYONORI
Format Patent
LanguageEnglish
Published 12.11.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To miniaturize a semiconductor device by reducing the area of a well feeding region, to suppress variation in a well potential between element formation regions, and to thin the width of an isolation portion.SOLUTION: A semiconductor device is formed on a surface of a semiconductor substrate and has a trench-shaped isolation portion whose bottom is located in a well region. The isolation portion includes conductor wiring electrically connected to the well region and an insulating film for burying the conductor wiring in the bottom. A part of the well region partitioned so as to be surrounded by the isolation portion forms an element formation region, and a semiconductor element is disposed in the element formation region.
Bibliography:Application Number: JP20110089194