SEMICONDUCTOR EXPOSURE DEVICE USING EXTREME ULTRA VIOLET LIGHT

PROBLEM TO BE SOLVED: To provide an exposure device capable of supplying only EUV light to a mask, while eliminating another light other than the EUV light.SOLUTION: A multilayer film of Mo/Si is formed on a front surface of a mirror 510, and blazed grooves 513 are formed on the multilayer film. Lig...

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Bibliographic Details
Main Authors WAKABAYASHI OSAMU, GEORGE SOUMAGNE, MORIYA MASATO
Format Patent
LanguageEnglish
Published 08.11.2012
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
OPTICS
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
X-RAY TECHNIQUE
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Summary:PROBLEM TO BE SOLVED: To provide an exposure device capable of supplying only EUV light to a mask, while eliminating another light other than the EUV light.SOLUTION: A multilayer film of Mo/Si is formed on a front surface of a mirror 510, and blazed grooves 513 are formed on the multilayer film. Light beams 203 and 301 made incident from an EUV light source device 1 are incident upon the mirror 510, and are reflected or diffracted. Since reflected EUV light 204 (including diffracted EUV light) and light 301A and 301B of other wavelengths have different reflection angles or different diffraction angles, their traveling directions are different. By eliminating the other light 301A and 301B with an aperture or a damper, it is possible to irradiate a mask 600 with EUV light having high purity.
Bibliography:Application Number: JP20120132145