METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• Main Authors: JIN SEUNG-WOO, SHON YONG SUN, ROUH KYOUNG-BONG, LEE MIN-YONG
• Format: Patent
• Language: English
• Published: 01.11.2012
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of improving the nonuniformity of transistor characteristics in a substrate.SOLUTION: A method comprises a step for performing an ion implantation S/D IMP for forming a source/drain junction of a transistor into predetermined regions of semiconductor substrates 11, 21; and a step for performing an additional compensation ion implantation CO IMP into a part of the source/drain junction to compensate the deviation of transistor characteristics depending on locations on the semiconductor substrates 11, 21. In order to locally perform the ion implantation, after a region 11A of scanning ion beam in an X direction parallel to planes of the substrates 11, 21 and a region 11A being parallel to the substrates 11, 21 and of scanning ion beam in a Y direction substantively orthogonal to the X direction are set, a scan rate in the X direction, a scan rate in the Y direction, or the scan rates in the X direction and the Y direction are adjusted and the compensation ion implantation CO IMP may be performed.