SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

• Main Authors: KAMIGAICHI TAKESHI, IZUMI TATSUO, OGI JUN
• Format: Patent
• Language: English
• Published: 18.10.2012
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor memory device allowing achievement of the high integration of memory cells and to provide a method of manufacturing the same.SOLUTION: A semiconductor memory device comprises: a plurality of first stacks provided on a semiconductor substrate; a second stack disposed outside the region in which the plurality of first stacks are disposed; and an interlayer insulating film that covers the first stacks and the second stack. The distance between the first stacks and the second stack is longer than the distance between the adjacent first stacks. First cavities are formed between the adjacent first stacks in the interlayer insulating film, and a second cavity is formed between the first stacks and the second stack in the interlayer insulating film. The bottom edge of the second cavity is located above the bottom edges of the first cavities.