QUANTUM DOT TYPE INFRARED DETECTOR

PROBLEM TO BE SOLVED: To make a response wavelength longer without lowering characteristics such as sensitivity and S/N in a quantum dot type infrared detector.SOLUTION: The quantum dot type infrared detector includes: the quantum dot 1; intermediate layers 2 which sandwich the quantum dot 1 and hav...

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Bibliographic Details
Main Authors SAITO TETSUO, KOYAMA MASATOSHI, NISHINO HIROSHI, KIBE MICHIYA, UCHIYAMA YASUHITO, YAMASHITA HIROYASU, SUGIZAKI GORO
Format Patent
LanguageEnglish
Published 11.10.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To make a response wavelength longer without lowering characteristics such as sensitivity and S/N in a quantum dot type infrared detector.SOLUTION: The quantum dot type infrared detector includes: the quantum dot 1; intermediate layers 2 which sandwich the quantum dot 1 and have an energy gap wider than that of the quantum dot 1; a base well layer 5 having the energy gap narrower than that of the intermediate layers 2; a first buried barrier layer 6 having the energy gap wider than that of the intermediate layers 2; and a second buried barrier layer 7 provided on the first buried barrier layer 6 and having the energy gap wider than that of the first buried barrier layer 6.
Bibliography:Application Number: JP20110056216