POSITIVE RESIST MATERIAL AND PATTERNING METHOD USING THE SAME

• Main Authors: NAGATA TAKESHI, MORISAWA TAKUMI, HATAKEYAMA JUN
• Format: Patent
• Language: English
• Published: 04.10.2012
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CINEMATOGRAPHY; COMPOSITIONS BASED THEREON; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS; MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS; MATERIALS THEREFOR; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES; THEIR PREPARATION OR CHEMICAL WORKING-UP

PROBLEM TO BE SOLVED: To provide a positive resist material, in particular, a chemically amplified positive resist material, which exhibits excellent resolution, coverage and adhesion on a highly reflective stepped substrate portion and gives a good pattern profile and minimal edge roughness after exposure, and thereby, which is particularly suitable as a fine pattern forming material for fabrication of VLSIs or a photomask by EB drawing.SOLUTION: The positive resist material comprises: a polymeric compound having a weight average molecular weight of 1,000 to 500,000 and containing a (meth)acrylate repeating unit in which a hydrogen atom of a carboxyl group is substituted with a cyclic acid labile group; and a dihydroxynaphthalene novolac resin; and a photoacid generator.