SEMICONDUCTOR DEVICE

• Main Authors: SHIRAISHI TSUKASA, KOYAMA MASAYOSHI, ISHIMARU YUKIHIRO, KOJIMA TOSHIYUKI
• Format: Patent
• Language: English
• Published: 06.09.2012
• Subjects: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS; BASIC ELECTRIC ELEMENTS; CONTROL OR REGULATION THEREOF; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERATION; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a power module having high reliability in a connection part of electrodes on a high-thermal-conductive insulating substrate.SOLUTION: A semiconductor device comprises: an insulative high thermal conducting substrate 1 having a plurality of substrate electrodes 2; a semiconductor element 3 arranged on any substrate electrode 2a of the insulative high thermal conducting substrate 1; and a metal connection body 7 connecting another substrate electrode 2b of the insulative high thermal conducting substrate 1 with a semiconductor electrode 4 of the semiconductor element 3. The metal connection body 7 has more than one layer of metal layers, and a lower layer metal layer 72 on the nearer side to the insulative high thermal conducting substrate 1 has a linear expansion coefficient smaller than that of an upper layer metal layer 71 on the farther side from the insulative high thermal conducting substrate 1.