SEMICONDUCTOR WAFER, SEMICONDUCTOR BAR, METHOD OF MANUFACTURING SEMICONDUCTOR WAFER, METHOD OF MANUFACTURING SEMICONDUCTOR BAR, AND METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT

• Main Author: NEGISHI MASAHITO
• Format: Patent
• Language: English
• Published: 16.08.2012
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor wafer in which a good crack can be formed by scribing, and to provide a semiconductor bar, a method of manufacturing the semiconductor wafer, a method of manufacturing the semiconductor bar, and a method of manufacturing a semiconductor element.SOLUTION: By using an epitaxial growth layer of a semiconductor wafer, a plurality of optical semiconductor elements (more specifically, semiconductor lasers) are formed side by side in a surface direction of the semiconductor wafer. An InGaAs epitaxial layer is provided continuously between the optical semiconductor elements, and a part (more specifically, an aperture or a groove) for exposing a layer underlying the InGaAs epitaxial layer at least to a layer overlying the InGaAs epitaxial layer is provided. A vertically progressing crack can be formed by performing the scribing along this part.