MANUFACTURING METHOD OF SINGLE CRYSTAL SEMICONDUCTOR WAFER

• Main Authors: FRIEDRICH PASSEK, HUBER ANDREAS, KNERER DIETER, LAMBERT ULRICH
• Format: Patent
• Language: English
• Published: 12.07.2012
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

PROBLEM TO BE SOLVED: To provide a semiconductor wafer that does not cause any problem when further size miniaturization is performed.SOLUTION: A single crystal semiconductor wafer has a region where defects are reduced. The region where the defects are reduced has density of GOI related defects in a range of 0-0.1 piece/cm. As a whole, the region accounts for unit area ratio of 10-100% of a planar flat surface of the semiconductor wafer. In that case, a remaining region of the semiconductor wafer has a clearly higher defect density than the region where the defects are reduced.