SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device which can inhibit deterioration in current drive capability of an embedded gate transistor.SOLUTION: A semiconductor device 100 of the present invention is a semiconductor device 100 comprising a semiconductor substrate 1 on which a plurality o...

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Bibliographic Details
Main Author OYU KIYONORI
Format Patent
LanguageEnglish
Published 12.07.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a semiconductor device which can inhibit deterioration in current drive capability of an embedded gate transistor.SOLUTION: A semiconductor device 100 of the present invention is a semiconductor device 100 comprising a semiconductor substrate 1 on which a plurality of active regions 50 are sectioned by element isolation regions 5 and word lines 8 embedded in the semiconductor substrate 1. The word line 8 includes a conductive layer 8b embedded in a first groove 8a via a gate insulation film 7a. The element isolation region 5 includes a conductive layer 5b embedded in a second groove 5a of a width narrower than that of the first groove 8a via a gate insulation film 7b.
Bibliography:Application Number: JP20100286647