LOCAL EXPOSURE METHOD

• Main Authors: KUBOTA HIKARI, ONOE KOTARO, IKEDA FUMIHIKO
• Format: Patent
• Language: English
• Published: 12.07.2012
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To improve uniformity in a resist residual film after development and to suppress variations in the line width and pitches of a wiring pattern.SOLUTION: An exposure method is provided, including the steps of: dividing a photosensitive film formed on a substrate G to be treated into a plurality of large blocks B1 and dividing the large block into a plurality of small blocks B2; setting irradiation illuminance at different levels by each small block in the large block; controlling light emission of a plurality of light emitting elements L on a photosensitive film on the substrate that relatively moves with respect to the light emitting elements L, based on the radiation illuminance set to each small block; developing the photosensitive film; measuring a residual film thickness of the photosensitive film by each small block and obtaining correlation data between the illuminance set in the small block and the residual film thickness; and determining the illuminance necessary to irradiate each large block from a target residual film thickness of the photosensitive film set by each large block based on the correlation data.